AUIRF3710ZSTRL, Транзистор N-МОП, полевой, 100В, 59А, 160Вт, D2PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062931970
- Артикул
- AUIRF3710ZSTRL
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 56 ns
- Rise Time:
- 77 ns
- Вес, г
- 0.43
Цена по запросу
(от 370 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 56 ns |
| Rise Time: | 77 ns |
| Вес, г | 0.43 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 160 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 17 ns |
| Typical Turn-Off Delay Time: | 41 ns |
| Id - Continuous Drain Current: | 59 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 35 S |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |