ARF463AP1G,RF FET Transistor, 500 V, 9 A, 180 W, 2 MHz, 100 MHz, TO-247
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8012901754
- Артикул
- ARF463AP1G
- Бренд
- Microchip Technology
- Gain:
- 15 dB
- Type:
- RF Power MOSFET
- Brand:
- Microchip Technology
- Fall Time:
- 4.2 ns
Цена по запросу
(от 10 360 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Gain: | 15 dB |
| Type: | RF Power MOSFET |
| Brand: | Microchip Technology |
| Fall Time: | 4.2 ns |
| Packaging: | Tube |
| Rise Time: | 4.3 ns |
| Вес, г | 0.001 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Output Power: | 100 W |
| Product Type: | RF MOSFET Transistors |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Product Category: | RF MOSFET Transistors |
| Operating Frequency: | 100 MHz |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 180 W |
| Vgs - Gate-Source Voltage: | +30 V |
| Operating Temperature Range: | -55 C to+150 C |
| Id - Continuous Drain Current: | 9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2 mS |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |