APT95GR65B2, IGBTs IGBT MOS 8 650 V 95 A TO-247 MAX
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- Код товара
- 8005439597
- Артикул
- APT95GR65B2
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Series
- -
- IGBT Type
- NPT
- Packaging
- Tube
Цена по запросу
(от 2 000 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторная микросxема IGBT N-CH 650V 208A 892000 МВт с 3-контактным разъемом (3 + вкладки) T-MAX Tube
Технические параметры
| Brand: | Microchip Technology |
| Series | - |
| IGBT Type | NPT |
| Packaging | Tube |
| Input Type | Standard |
| Packaging: | Tube |
| Вес, г | 6.81 |
| Gate Charge | 420nC |
| Part Status | Active |
| Power - Max | 892W |
| Technology: | Si |
| Manufacturer | Microsemi Corporation |
| Subcategory: | IGBTs |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Package / Case | TO-247-3 |
| Test Condition | 433V, 95A, 4.3 Ohm, 15V |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Switching Energy | 3.12mJ(on), 2.55mJ(off) |
| Product Category: | IGBTs |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Td (on/off) @ 25В°C | 29ns/226ns |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 892 W |
| Supplier Device Package | T-MAXв(ў(B2) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 95A |
| Gate-Emitter Leakage Current: | +/-250 nA |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Current - Collector (Ic) (Max) | 208A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Pulsed (Icm) | 400A |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Continuous Collector Current Ic Max: | 208 A |
| Collector-Emitter Saturation Voltage: | 2.6 V |
| Continuous Collector Current at 25 C: | 208 A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |