APT5020BVFRG, MOSFETs FREDFET MOS 5 500 V 200 mOhm TO-247
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004581578
- Артикул
- APT5020BVFRG
- Бренд
- Microchip Technology
- Tab
- Tab
- PPAP
- No
- Brand:
- Microchip Technology
- EU RoHS
- Compliant
Цена по запросу
(от 1 847,64 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 500V 26A с 3-контактным разъемом (3+ язычка) на трубке TO-247
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Microchip Technology |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Вес, г | 12.48 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 225 nC |
| Process Technology | Power MOS V |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 10 |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 26 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 300000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Gate Charge @ Vgs (nC) | 150@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Rds On - Drain-Source Resistance: | 200 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 26 |
| Typical Input Capacitance @ Vds (pF) | 3700@25V |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Maximum Drain Source Resistance (mOhm) | 200@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Пороговое напряжение на затворе | 3…5 |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 20 Ом |