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APT4M120K, Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3

APT4M120K, Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3

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Код товара
8065568223
Артикул
APT4M120K
Бренд
Microchip Technology
Case
TO220-3
Brand:
Microchip Technology
Mounting
THT
Fall Time:
6.9 ns
Цена по запросу
(от 1 910 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

CaseTO220-3
Brand:Microchip Technology
MountingTHT
Fall Time:6.9 ns
Packaging:Tube
Rise Time:4.4 ns
TechnologyPOWER MOS 8®
Tradename:Power MOS 8
Вес, г1.95
Gate charge43nC
Technology:Si
ManufacturerMICROCHIP(MICROSEMI)
Polarisationunipolar
Subcategory:MOSFETs
Channel Mode:Enhancement
Drain current3A
Manufacturer:Microchip
Product Type:MOSFET
Configuration:Single
Kind of channelenhanced
Mounting Style:Through Hole
Package / Case:TO-220-3
Power dissipation225W
Product Category:MOSFET
Qg - Gate Charge:43 nC
Type of transistorN-MOSFET
Gate-source voltage±30V
Number of Channels:1 Channel
On-state resistance3.8Ω
Drain-source voltage1.2kV
Pulsed drain current15A
Transistor Polarity:N-Channel
Pd - Power Dissipation:225 W
Vgs - Gate-Source Voltage:-30 V, +30 V
Typical Turn-On Delay Time:7.4 ns
Typical Turn-Off Delay Time:24 ns
Id - Continuous Drain Current:5 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Forward Transconductance - Min:4.5 S
Rds On - Drain-Source Resistance:3.12 Ohms
Vds - Drain-Source Breakdown Voltage:1.2 kV
Vgs th - Gate-Source Threshold Voltage:4 V
Factory Pack Quantity: Factory Pack Quantity:1