APT4M120K, MOSFETs MOSFET MOS 8 1200 V 4 A TO-220
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- Код товара
- 8007230734
- Артикул
- APT4M120K
- Бренд
- Microchip Technology
- Case
- TO220-3
- Brand:
- Microchip Technology
- Mounting
- THT
- Fall Time:
- 6.9 ns
Цена по запросу
(от 589,41 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | TO220-3 |
| Brand: | Microchip Technology |
| Mounting | THT |
| Fall Time: | 6.9 ns |
| Packaging: | Tube |
| Rise Time: | 4.4 ns |
| Technology | POWER MOS 8® |
| Tradename: | Power MOS 8 |
| Вес, г | 1.95 |
| Gate charge | 43nC |
| Technology: | Si |
| Manufacturer | MICROCHIP(MICROSEMI) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Drain current | 3A |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Power dissipation | 225W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 43 nC |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 3.8Ω |
| Drain-source voltage | 1.2kV |
| Pulsed drain current | 15A |
| Transistor Polarity: | N-Channel |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 225 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 7.4 ns |
| Typical Turn-Off Delay Time: | 24 ns |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4.5 S |
| Rds On - Drain-Source Resistance: | 3.12 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 1200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 225 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |