APT44F80B2, Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 173A; 1135W
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- Код товара
- 8042877750
- Артикул
- APT44F80B2
- Бренд
- Microchip Technology
- Case
- TO247MAX
- Brand:
- Microchip Technology
- Mounting
- THT
- Packaging:
- Tube
Цена по запросу
(от 5 410 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор FG, FREDFET, 800V, TO-247 T-MAX
Технические параметры
| Case | TO247MAX |
| Brand: | Microchip Technology |
| Mounting | THT |
| Packaging: | Tube |
| Technology | POWER MOS 8® |
| Вес, г | 6 |
| Gate charge | 305nC |
| Technology: | Si |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 29A |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhancement |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | T-MAX-3 |
| Power dissipation | 1135W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 305 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.21Ω |
| Drain-source voltage | 800V |
| Pulsed drain current | 173A |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 1.135 mW |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Id - Continuous Drain Current: | 47 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 210 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |