APT35GN120L2DQ2G, Транзистор IGBT (N-канал 1200В 94A TO264)
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- Код товара
- 8024515607
- Артикул
- APT35GN120L2DQ2G
- Бренд
- Microsemi
- Brand:
- Microchip Technology
- Packaging:
- Tube
- Вес, г
- 20
- Technology:
- Si
Цена по запросу
(от 6 670 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Packaging: | Tube |
| Вес, г | 20 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | Microchip |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-264MAX-3 |
| Product Category: | IGBT Transistors |
| Pd - Power Dissipation: | 379 W |
| Operating Temperature Range: | -55 C to+150 C |
| Continuous Collector Current: | 94 A |
| Gate-Emitter Leakage Current: | 600 nA |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Continuous Collector Current Ic Max: | 94 A |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Continuous Collector Current at 25 C: | 94 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |