APT29F100B2, Trans MOSFET N-CH Si 1KV 30A 3-Pin(3+Tab) T-MAX Tube
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- Код товара
- 8003116905
- Артикул
- APT29F100B2
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Fall Time:
- 33 ns
- Packaging:
- Tube
- Rise Time:
- 35 ns
Цена по запросу
(от 4 910 ₽)
Минимальный заказ: 6 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Fall Time: | 33 ns |
| Packaging: | Tube |
| Rise Time: | 35 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | T-MAX-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 260 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 1.04 kW |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 39 ns |
| Typical Turn-Off Delay Time: | 130 ns |
| Id - Continuous Drain Current: | 30 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 34 S |
| Rds On - Drain-Source Resistance: | 440 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |