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APT25GT120BRG, Transistor: IGBT; 1200V; 25A; 347W; TO247-3

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Код товара
8066353873
Артикул
APT25GT120BRG
Бренд
Microchip Technology
ECCN
EAR99
HTSUS
8541.29.0095
Brand:
Microchip Technology
Series
Thunderbolt IGBTВ® ->
Цена по запросу
(от 2 910 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

IGBT NPT 1200V 54A 347 Вт со сквозным отверстием TO-247 [B]

Технические параметры

ECCNEAR99
HTSUS8541.29.0095
Brand:Microchip Technology
SeriesThunderbolt IGBTВ® ->
PackageTube
IGBT TypeNPT
Input TypeStandard
Packaging:Tube
Tradename:Thunderbolt IGBT
Вес, г6.05
Gate Charge170nC
Power - Max347W
RoHS StatusRoHS Compliant
Technology:Si
REACH StatusREACH Unaffected
Subcategory:IGBTs
Manufacturer:Microchip
Mounting TypeThrough Hole
Product Type:IGBT Transistors
Configuration:Single
Package / CaseTO-247-3
Test Condition800V, 25A, 5Ohm, 15V
Mounting Style:Through Hole
Package / Case:TO-247-3
Switching Energy930ВµJ (on), 720ВµJ (off)
Product Category:IGBT Transistors
Base Product NumberAPT25GT120 ->
Operating Temperature-55В°C ~ 150В°C (TJ)
Td (on/off) @ 25В°C14ns/150ns
Pd - Power Dissipation:347 W
Supplier Device PackageTO-247 [B]
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 25A
Operating Temperature Range:-55 C to+150 C
Continuous Collector Current:54 A
Gate-Emitter Leakage Current:120 nA
Maximum Gate Emitter Voltage:-30 V, 30 V
Current - Collector (Ic) (Max)54A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Current - Collector Pulsed (Icm)75A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:1.2 kV
Continuous Collector Current Ic Max:54 A
Collector-Emitter Saturation Voltage:3.2 V
Continuous Collector Current at 25 C:54 A
Voltage - Collector Emitter Breakdown (Max)1200V
Factory Pack Quantity: Factory Pack Quantity:1

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