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APT25GT120BRDQ2G, Transistor: IGBT; 1200V; 25A; 347W; TO247-3

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Код товара
8062570739
Артикул
APT25GT120BRDQ2G
Бренд
Microchip Technology
Brand:
Microchip Technology
Series
Thunderbolt IGBTВ(r)
IGBT Type
NPT
Packaging
Tube
Цена по запросу
(от 1 250 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзисторная микросxема IGBT N-CH 1200V 54A 347000 МВт с 3-контактным разъемом (3+ Tab) TO-247

Технические параметры

Brand:Microchip Technology
SeriesThunderbolt IGBTВ(r)
IGBT TypeNPT
PackagingTube
Input TypeStandard
Packaging:Tube
Tradename:Thunderbolt IGBT
Вес, г6.08
Gate Charge170nC
Part StatusActive
Power - Max347W
Technology:Si
ManufacturerMicrosemi Corporation
Subcategory:IGBTs
Manufacturer:Microchip
Mounting TypeThrough Hole
Product Type:IGBT Transistors
Configuration:Single
Package / CaseTO-247-3
Test Condition800V, 25A, 5 Ohm, 15V
Mounting Style:Through Hole
Package / Case:TO-247-3
Switching Energy930ВuJ(on), 720ВuJ(off)
Product Category:IGBT Transistors
Operating Temperature-55В C ~ 150В C(TJ)
Td (on/off) @ 25В°C14ns/150ns
Pd - Power Dissipation:347 W
Supplier Device PackageTO-247(B)
Vce(on) (Max) @ Vge, Ic3.7V 15V, 25A
Operating Temperature Range:-55 C to+150 C
Continuous Collector Current:54 A
Gate-Emitter Leakage Current:120 nA
Maximum Gate Emitter Voltage:-30 V, 30 V
Current - Collector (Ic) (Max)54A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Current - Collector Pulsed (Icm)75A
Collector- Emitter Voltage VCEO Max:1.2 kV
Continuous Collector Current Ic Max:54 A
Collector-Emitter Saturation Voltage:3.2 V
Continuous Collector Current at 25 C:54 A
Voltage - Collector Emitter Breakdown (Max)1200V
Factory Pack Quantity: Factory Pack Quantity:1