APT13GP120BDQ1G, IGBTs IGBT PT MOS 7 Combi 1200 V 13 A TO-247
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004809303
- Артикул
- APT13GP120BDQ1G
- Бренд
- Microchip Technology
- Case
- TO247-3
- Brand:
- Microchip Technology
- Mounting
- THT
- Packaging:
- Tube
Цена по запросу
(от 1 710 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | TO247-3 |
| Brand: | Microchip Technology |
| Mounting | THT |
| Packaging: | Tube |
| Technology | POWER MOS 7®, PT |
| Вес, г | 5.9 |
| Gate charge | 55nC |
| Technology: | Si |
| Manufacturer | MICROCHIP(MICROSEMI) |
| Subcategory: | IGBTs |
| Turn-on time | 21ns |
| Manufacturer: | Microchip |
| Product Type: | IGBT Transistors |
| Turn-off time | 270ns |
| Configuration: | Single |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Collector current | 20A |
| Power dissipation | 250W |
| Product Category: | IGBT Transistors |
| Type of transistor | IGBT |
| Gate-emitter voltage | ±20V |
| Pd - Power Dissipation: | 250 W |
| Pulsed collector current | 50A |
| Collector-emitter voltage | 1.2kV |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Features of semiconductor devices | integrated anti-parallel diode |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.3 V |
| Continuous Collector Current at 25 C: | 41 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |