APT100GT120JRDQ4, IGBT Modules IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004809293
- Артикул
- APT100GT120JRDQ4
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Product:
- IGBT Silicon Carbide Modules
- Packaging:
- Tube
- Вес, г
- 30
Цена по запросу
(от 14 420 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Product: | IGBT Silicon Carbide Modules |
| Packaging: | Tube |
| Вес, г | 30 |
| Technology: | SiC |
| Subcategory: | IGBTs |
| Manufacturer: | Microchip |
| Package/Case: | ISOTOP-4 |
| Product Type: | IGBT Modules |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | IGBT Modules |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 570 W |
| Gate-Emitter Leakage Current: | 600 nA |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Continuous Collector Current at 25 C: | 123 A |