ALD212914SAL, MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004980700
- Артикул
- ALD212914SAL
- Бренд
- Advanced Linear Devices
- Brand:
- Advanced Linear Devices
- Series:
- ALD212914S
- Packaging:
- Tube
- Tradename:
- EPAD
Цена по запросу
(от 1 960 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Advanced Linear Devices |
| Series: | ALD212914S |
| Packaging: | Tube |
| Tradename: | EPAD |
| Вес, г | 0.07 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Advanced Linear Devices |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 500 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current: | 79 mA |
| Maximum Operating Temperature: | +70 C |
| Minimum Operating Temperature: | 0 C |
| Rds On - Drain-Source Resistance: | 14 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |