ALD110800APCL, MOSFETs Quad EPAD(R) N-Ch
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004980687
- Артикул
- ALD110800APCL
- Бренд
- Advanced Linear Devices
- Type:
- MOSFET
- Brand:
- Advanced Linear Devices
- Family
- FETs-Arrays
- Series
- EPAD®, Zero Threshold™
Цена по запросу
(от 1 960 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET Quad EPAD(R) N-канальный
Технические параметры
| Type: | MOSFET |
| Brand: | Advanced Linear Devices |
| Family | FETs-Arrays |
| Series | EPAD®, Zero Threshold™ |
| Series: | ALD110800A |
| Category | Discrete Semiconductor Products |
| FET Type | 4 N-Channel, Matched Pair |
| Product: | MOSFET Small Signal |
| Packaging | Tube |
| Packaging: | Tube |
| Вес, г | 1.03 |
| FET Feature | Standard |
| Other Names | 1014-1016 |
| Power - Max | 500mW |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Depletion |
| Manufacturer: | Advanced Linear Devices |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Quad |
| Online Catalog | N-Channel Standard FETs |
| Package / Case | 16-DIP(0.300", 7.62mm) |
| Mounting Style: | Through Hole |
| Package / Case: | PDIP-16 |
| Standard Package | 25 |
| Transistor Type: | 4 N-Channel |
| Product Category: | MOSFET |
| Vgs(th) (Max) @ Id | 10mV @ 1µA |
| Структура | 4 N-Channel |
| Number of Channels: | 4 Channel |
| Transistor Polarity: | N-Channel |
| Rds On (Max) @ Id, Vgs | 500 Ohm @ 4V |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Supplier Device Package | 16-PDIP |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Drain to Source Voltage (Vdss) | 10.6V |
| Id - Continuous Drain Current: | 12 mA |
| Input Capacitance (Ciss) @ Vds | 2.5pF @ 5V |
| Maximum Operating Temperature: | +70 C |
| Minimum Operating Temperature: | 0 C |
| Forward Transconductance - Min: | 0.0014 S |
| Rds On - Drain-Source Resistance: | 500 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 0 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Пороговое напряжение на затворе | -12 V, +12 V |
| Максимальное напряжение сток-исток Uси,В | 10 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 500 Ohms |