AIMBG75R027M1HXTMA1, Infineon AIM N-Kanal, SMD MOSFET 750 V / 64 A, 7-Pin PG-TO263-7
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063963866
- Артикул
- AIMBG75R027M1HXTMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 9 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 12 ns
Цена по запросу
(от 1 930 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 9 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 12 ns |
| Вес, г | 1 |
| Technology: | SiC |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TO-263-7 |
| Product Type: | SiC MOSFETS |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | AIMBG75R027M1H SP005596202 |
| Product Category: | SiC MOSFETs |
| Qg - Gate Charge: | 49 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 273 W |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 24 ns |
| Id - Continuous Drain Current: | 64 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Vgs th - Gate-Source Threshold Voltage: | 5.6 V |