55GN01CA-TB-E, Trans RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R
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- Код товара
- 8001070078
- Артикул
- 55GN01CA-TB-E
- Бренд
- ON Semiconductor***
- Type:
- RF Bipolar Power
- Brand:
- onsemi
- Series:
- 55GN01CA
- Вес, г
- 0.05
Цена по запросу
(от 25 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | RF Bipolar Power |
| Brand: | onsemi |
| Series: | 55GN01CA |
| Вес, г | 0.05 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | RF Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | CP-3 |
| Transistor Type: | Bipolar Power |
| Product Category: | RF Bipolar Transistors |
| Структура | npn |
| Operating Frequency: | 5.5 GHz |
| Transistor Polarity: | NPN |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 180 |
| Gain Bandwidth Product fT: | 4.5 GHz |
| Emitter- Base Voltage VEBO: | 3 V |
| Operating Temperature Range: | +25 C to+150 C |
| Collector- Base Voltage VCBO: | 20 V |
| Continuous Collector Current: | 5 mA |
| Maximum DC Collector Current: | 70 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | +25 C |
| DC Collector/Base Gain hfe Min: | 100 |
| Collector- Emitter Voltage VCEO Max: | 10 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |