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2SK3019TL Транзистор

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Код товара
8060561164
Артикул
2SK3019TL
Бренд
Rohm
ECCN
EAR99
Type
MOSFET
Brand
ROHM Semiconductor
HTSUS
8541.21.0095
Цена по запросу
(от 61 ₽)
Минимальный заказ: 500 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор N-МОП, полевой, 30В, 0.1А [SOT-416]

Технические параметры

ECCNEAR99
TypeMOSFET
BrandROHM Semiconductor
HTSUS8541.21.0095
Series2SK3019
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
ProductMOSFET Small Signal
FET TypeN-Channel
Fall Time80 ns
PackagingCut Tape or Reel
Rise Time35 ns
Vgs (Max)В±20V
TechnologyMOSFET (Metal Oxide)
Вес, г0.05
RoHS StatusROHS3 Compliant
SubcategoryMOSFETs
Channel ModeEnhancement
ManufacturerROHM Semiconductor
Product TypeMOSFET
REACH StatusREACH Unaffected
ConfigurationSingle
Mounting TypeSurface Mount
Mounting StyleSMD/SMT
Package / CaseSC-75, SOT-416
Part # Aliases2SK3019
Transistor Type1 N-Channel MOSFET
Product CategoryMOSFET
Number Of Channels1 Channel
Vgs(th) (Max) @ Id1.5V @ 100ВµA
Base Product Number2SK3019 ->
Transistor PolarityN-Channel
Factory Pack Quantity3000
Operating Temperature150В°C (TJ)
Pd - Power Dissipation150 mW
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Power Dissipation (Max)150mW (Ta)
Supplier Device PackageEMT3
Vgs - Gate-Source Voltage4 V
Typical Turn-On Delay Time15 ns
Typical Turn-Off Delay Time80 ns
Id - Continuous Drain Current100 mA
Maximum Operating Temperature+150 C
Drain to Source Voltage (Vdss)30V
кол-во в упаковке3000
Moisture Sensitivity Level (MSL)1 (Unlimited)
Rds On - Drain-Source Resistance8 Ohms
Input Capacitance (Ciss) (Max) @ Vds13pF @ 5V
Vds - Drain-Source Breakdown Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Vgs Th - Gate-Source Threshold Voltage800 mV
Current - Continuous Drain (Id) @ 25В°C100mA (Ta)

Техническая документация