Транзистор полевой 2SK3019TL
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055405073
- Артикул
- 2SK3019TL
- Бренд
- Rohm
- ECCN
- EAR99
- Type
- MOSFET
- Brand
- ROHM Semiconductor
- HTSUS
- 8541.21.0095
Цена по запросу
(от 61 ₽)
Минимальный заказ: 28 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 30В, 0.1А [SOT-416]
Технические параметры
| ECCN | EAR99 |
| Type | MOSFET |
| Brand | ROHM Semiconductor |
| HTSUS | 8541.21.0095 |
| Width | 0.8mm |
| Series | 2SK3019 |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Product | MOSFET Small Signal |
| FET Type | N-Channel |
| Fall Time | 80 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Rise Time | 35 ns |
| Vgs (Max) | В±20V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ROHM Semiconductor |
| Package Type | EMT |
| Product Type | MOSFET |
| REACH Status | REACH Unaffected |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-75, SOT-416 |
| Part # Aliases | 2SK3019 |
| Transistor Type | 1 N-Channel MOSFET |
| Product Category | MOSFET |
| Number Of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 1.5V @ 100ВµA |
| Base Product Number | 2SK3019 -> |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Operating Temperature | 150В°C (TJ) |
| Pd - Power Dissipation | 150 mW |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Особенности | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Supplier Device Package | EMT3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 mW |
| Vgs - Gate-Source Voltage | 4 V |
| Typical Turn-On Delay Time | 15 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 80 ns |
| Maximum Drain Source Voltage | 30 V |
| Id - Continuous Drain Current | 100 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 30V |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | 8 Ω |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 100 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 8 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs Th - Gate-Source Threshold Voltage | 800 mV |
| Current - Continuous Drain (Id) @ 25В°C | 100mA (Ta) |
| Крутизна характеристики, S | 20 |
| Пороговое напряжение на затворе | 1.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.15 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 8 Ом/0.01А, 4В |