2SJ305TE85LF, MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
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- Код товара
- 8070690006
- Артикул
- 2SJ305TE85LF
- Бренд
- Toshiba
- Brand:
- Toshiba
- Вес, г
- 0.1
- No. of Pins
- 3Pins
- Technology:
- Si
Цена по запросу
(от 320 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Вес, г | 0.1 |
| No. of Pins | 3Pins |
| Technology: | Si |
| Channel Type | P Channel |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Package/Case: | SOT-346-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Mounting | Surface Mount |
| Transistor Polarity: | P-Channel |
| Transistor Case Style | TO-236MOD |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 200 mW |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Continuous Drain Current Id | 200mA |
| Typical Turn-On Delay Time: | 0.06 us |
| Typical Turn-Off Delay Time: | 0.15 us |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mS |
| Gate Source Threshold Voltage Max | 1.5V |
| Rds On - Drain-Source Resistance: | 4 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |