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2SD2153T100W, Bipolar Transistors - BJT TRANS GP BJT NPN 25V 2A 4PIN

2SD2153T100W, Bipolar Transistors - BJT TRANS GP BJT NPN 25V 2A 4PIN

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Код товара
8063811715
Артикул
2SD2153T100W
Бренд
Rohm
ECCN
EAR99
HTSUS
8541.29.0075
Brand:
ROHM Semiconductor
Package
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 82,34 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 25V 2A 110 МГц 2 Вт для поверxностного монтажа MPT3

Технические параметры

ECCNEAR99
HTSUS8541.29.0075
Brand:ROHM Semiconductor
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Packaging:Reel, Cut Tape
Вес, г0.05
Power - Max2W
RoHS StatusROHS3 Compliant
Technology:Si
REACH StatusREACH Affected
Subcategory:Transistors
Manufacturer:ROHM Semiconductor
Mounting TypeSurface Mount
Package/Case:SOT-89-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-243AA
Mounting Style:SMD/SMT
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Base Product Number2SD2153 ->
Transistor Polarity:NPN
Operating Temperature150В°C (TJ)
Factory Pack Quantity:1000
Frequency - Transition110MHz
Pd - Power Dissipation:500 mW
Supplier Device PackageMPT3
DC Current Gain hFE Max:1200 at 500 mA, 6 V
Gain Bandwidth Product fT:110 MHz
Emitter- Base Voltage VEBO:6 V
Collector- Base Voltage VCBO:30 V
Continuous Collector Current:2 A
Maximum DC Collector Current:2 A
Vce Saturation (Max) @ Ib, Ic500mV @ 20mA, 1A
Current - Collector (Ic) (Max)2A
Maximum Operating Temperature:+150 C
DC Collector/Base Gain hFE Min:1200
Current - Collector Cutoff (Max)500nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:25 V
Collector-Emitter Saturation Voltage:500 mV
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 500mA, 6V
Voltage - Collector Emitter Breakdown (Max)25V
Максимально допустимый ток к ( Iк макс.А)2

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