2SD2150T100R, Bipolar Transistors - BJT NPN 20V 3A
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- Код товара
- 8005259083
- Артикул
- 2SD2150T100R
- Бренд
- Rohm
- Brand
- ROHM Semiconductor
- Width
- 2.5 mm
- Brand:
- ROHM Semiconductor
- Height
- 1.5 mm
Цена по запросу
(от 166 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT NPN 20V 3A
Технические параметры
| Brand | ROHM Semiconductor |
| Width | 2.5 mm |
| Brand: | ROHM Semiconductor |
| Height | 1.5 mm |
| Length | 4.5 mm |
| Series | 2SD2150 |
| Packaging | Cut Tape or Reel |
| Вес, г | 0.29 |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | ROHM Semiconductor |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors - BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 1000 |
| Operating Temperature | - |
| Collector Current (Ic) | 3A |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation | 500 mW |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain HFE Max | 560 |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 560 |
| Gain Bandwidth Product FT | 290 MHz |
| Transition Frequency (fT) | 290MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Gain Bandwidth Product fT: | 290 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO | 40 V |
| Continuous Collector Current | 3 A |
| DC Current Gain (hFE@Ic,Vce) | 180@100mA, 2V |
| Maximum DC Collector Current | 3 A |
| Collector- Base Voltage VCBO: | 40 V |
| Continuous Collector Current: | 3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature | + 150 C |
| DC Collector/Base Gain Hfe Min | 120 |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 120 |
| Collector Cut-Off Current (Icbo) | 100uA |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@2A, 100mA |