2SCR523MT2L, Транзистор: NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062423084
- Артикул
- 2SCR523MT2L
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Вес, г
- 0.1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 8,30 ₽)
Минимальный заказ: 8000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 150 МВт, 120 В при 1 мА, 6 В 100 мА на биполярныx транзистораx NPN SOT-723 - BJT ROHS
Технические параметры
| Brand: | ROHM Semiconductor |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | SOT-723-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 2SCR523M |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | - |
| Collector Current (Ic) | 100mA |
| Factory Pack Quantity: | 8000 |
| Pd - Power Dissipation | 150mW |
| Power Dissipation (Pd) | 150mW |
| Pd - Power Dissipation: | 150 mW |
| DC Current Gain hFE Max: | 560 |
| Transition Frequency (fT) | 350MHz |
| Gain Bandwidth Product fT: | 350 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 120@1mA, 6V |
| Maximum DC Collector Current | 100mA |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 120 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage | 50V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 100 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 100mV@50mA, 5mA |