2SCR513P5T100, Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) MPT T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002289227
- Артикул
- 2SCR513P5T100
- Бренд
- Rohm
- RoHS
- Details
- Brand
- ROHM Semiconductor
- Series
- 2SxR
- Packaging
- Reel
Цена по запросу
(от 66 ₽)
Минимальный заказ: 430 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 500 МВт, 180 В при 50 мА, 2 В 1 А, биполярные транзисторы NPN SOT-89-3 - BJT ROHS
Технические параметры
| RoHS | Details |
| Brand | ROHM Semiconductor |
| Series | 2SxR |
| Packaging | Reel |
| Pin Count | 3+Tab |
| Technology | Si |
| Вес, г | 1 |
| Manufacturer | ROHM Semiconductor |
| Package Type | SOT-89 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-62-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 1000 |
| Operating Temperature | - |
| Collector Current (Ic) | 1A |
| Pd - Power Dissipation | 500 mW |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain hFE Max | 450 at 50 mA, 2 V |
| Minimum DC Current Gain | 180 |
| Transistor Configuration | Common Emitter |
| Gain Bandwidth Product fT | 360 MHz |
| Maximum Power Dissipation | 500 mW |
| Transition Frequency (fT) | 360MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 50 V |
| Continuous Collector Current | 1 A |
| DC Current Gain (hFE@Ic,Vce) | 180@50mA, 2V |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 180 at 50 mA, 2 V |
| Maximum Collector Base Voltage | 50 V |
| Collector Cut-Off Current (Icbo) | 1uA |
| Maximum Collector Emitter Voltage | 50 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | 130 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 130mV@500mA, 25mA |