2SC5712(TE12L,F), SOT-89 Bipolar Transistors - BJT
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- Код товара
- 8017680115
- Артикул
- 2SC5712(TE12L,F)
- Бренд
- Toshiba
- Brand:
- Toshiba
- Вес, г
- 0.12
- Power - Max
- 1 W
- Technology:
- Si
Цена по запросу
(от 110 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В, 1 Вт, 400 при 300 мА, 2 В, 3 А, биполярные транзисторы NPN SOT-89 - BJT ROHS
Технические параметры
| Brand: | Toshiba |
| Вес, г | 0.12 |
| Power - Max | 1 W |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-89/TO-243 |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Package / Case | TO-243AA |
| Mounting Style: | Through Hole |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Operating Temperature | 150°C(TJ) |
| Collector Current (Ic) | 3A |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 1W |
| Pd - Power Dissipation: | 1 W |
| Supplier Device Package | PW-MINI |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain (hFE@Ic,Vce) | 400@300mA, 2V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 300 mA |
| Maximum DC Collector Current: | 3 A |
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 20mA, 1A |
| Current - Collector (Ic) (Max) | 3 A |
| DC Collector/Base Gain hFE Min: | 400 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 140 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 300mA, 2V |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 140mV@20mA, 1A |