2SC5566-TD-E, Bipolar (BJT) Single Transistor, NPN, 50 V, 4 A, 3.5 W, SOT-89, Surface Mount
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- Код товара
- 8062792086
- Артикул
- 2SC5566-TD-E
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.75
- Tab
- Tab
- Case
- SOT89
- Type
- NPN
Цена по запросу
(от 112 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор биполярный общего применения NPN 100В 4А 1300мВт 4-Pin(3+Tab) SOT-89 лента на катушке
Технические параметры
| HTS | 8541.29.00.75 |
| Tab | Tab |
| Case | SOT89 |
| Type | NPN |
| Brand: | onsemi |
| EU RoHS | Compliant with Exemption |
| Series: | 2SC5566 |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Frequency | 400MHz |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.11 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Current gain | 200…560 |
| Manufacturer | ONSEMI |
| Polarisation | bipolar |
| Subcategory: | Transistors |
| Корпус | SOT-89/TO-243 | SOT-89-3 |
| Configuration | Single Dual Collector |
| Manufacturer: | onsemi |
| Package Width | 2.5 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Height | 1.5 |
| Package Length | 4.5 |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | PCP-3 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Collector current | 4A |
| Power dissipation | 3.5W |
| Product Category: | Bipolar Transistors-BJT |
| Type of transistor | NPN |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | TO-243-AA |
| Minimum DC Current Gain | 200@500mA@2V |
| Pd - Power Dissipation: | 3.5 W |
| DC Current Gain hFE Max: | 560 |
| Collector-emitter voltage | 100V |
| Gain Bandwidth Product fT: | 400 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | -4 A, 4 A |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1300 |
| DC Collector/Base Gain hfe Min: | 200 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 400(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 150 mV |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@100mA@2A |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.13@50mA@1A|0.225@100mA@2A |
| Максимально допустимый ток к ( Iк макс.А) | 4 |