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2SC4117-BL,LF, Bipolar Transistors - BJT Transistor for Low Freq. Amplification

2SC4117-BL,LF, Bipolar Transistors - BJT Transistor for Low Freq. Amplification

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Код товара
8059041153
Артикул
2SC4117-BL,LF
Бренд
Toshiba
ECCN
EAR99
HTSUS
8541.21.0075
Brand:
Toshiba
Package
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 17 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 120 В 100 мА 100 МГц 100 МВт для поверxностного монтажа USM

Технические параметры

ECCNEAR99
HTSUS8541.21.0075
Brand:Toshiba
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Вес, г0.01
Power - Max100mW
RoHS StatusRoHS Compliant
Technology:Si
Subcategory:Transistors
Manufacturer:Toshiba
Mounting TypeSurface Mount
Package/Case:SC-70-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseSC-70, SOT-323
Qualification:AEC-Q101
Mounting Style:SMD/SMT
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Base Product NumberTC4069 ->
Transistor Polarity:NPN
Operating Temperature125В°C (TJ)
Factory Pack Quantity:3000
Frequency - Transition100MHz
Pd - Power Dissipation:100 mW
Supplier Device PackageUSM
DC Current Gain hFE Max:700 at 2 mA, 6 V
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:5 V
Collector- Base Voltage VCBO:120 V
Maximum DC Collector Current:100 mA
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector (Ic) (Max)100mA
Maximum Operating Temperature:+125 C
DC Collector/Base Gain hFE Min:200
Current - Collector Cutoff (Max)100nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:120 V
Collector-Emitter Saturation Voltage:300 mV
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)120V

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