2SC3647T-TD-E,Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 1.5 W, SOT-89, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8977508020
- Артикул
- 2SC3647T-TD-E
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor
- Brand:
- onsemi
- Series
- 2SC3647
Цена по запросу
(от 123 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ТРАНЗИСТОР, NPN, 100 В, 2 А, SOT-89; Полярность транзистора:NPN; Напряжение коллектор-эмиттер, V(br)ceo:100 В; Частота переxода ft:120 МГц; Рассеиваемая мощность Pd:1,5 Вт; Ток коллектора постоянного тока:2 А; Коэффициент усиления по постоянному току hFE:200hFE; Транзистор
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor |
| Brand: | onsemi |
| Series | 2SC3647 |
| Packaging | Reel |
| Вес, г | 0.106 |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Subcategory: | Transistors |
| Корпус | SOT-89/TO-243 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package/Case: | PCP-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | PCP-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 1000 |
| Operating Temperature | - |
| Collector Current (Ic) | 2A |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation | 1.5 W |
| Power Dissipation (Pd) | 500mW |
| Pd - Power Dissipation: | 1.5 W |
| Gain Bandwidth Product fT | 120 MHz |
| Transition Frequency (fT) | 120MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Gain Bandwidth Product fT: | 120 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO | 120 V |
| DC Current Gain (hFE@Ic,Vce) | 100@100mA, 5V |
| Maximum DC Collector Current | 3 A |
| Collector- Base Voltage VCBO: | 120 V |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature: | +150 C |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage | 0.13 V |
| Collector-Emitter Saturation Voltage: | 130 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 130mV@1A, 100mA |