2SC3325-Y,LF, Bipolar Transistors - BJT Transistor for Low Freq. Amplification
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- Код товара
- 8005509451
- Артикул
- 2SC3325-Y,LF
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series:
- 2SC3325
- Вес, г
- 0.01
- Technology:
- Si
Цена по запросу
(от 110 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Series: | 2SC3325 |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Toshiba |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-236-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Collector Current (Ic) | 500mA |
| Pd - Power Dissipation | 200mW |
| Power Dissipation (Pd) | 200mW |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 240 at 100 mA, 1 V |
| Transition Frequency (fT) | 300MHz |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 120@100mA, 1V |
| Maximum DC Collector Current | 500mA |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 70 at 100 mA, 1 V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage | 50V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 100 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 100mV@100mA, 10mA |