2SB1205T-TL-E, Trans GP BJT PNP 20V 5A 1000mW 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001346773
- Артикул
- 2SB1205T-TL-E
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Type
- PNP
Цена по запросу
(от 110 ₽)
Минимальный заказ: 832 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 20V 5A 1000 МВт 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Корпус | TO-252/DPAK |
| Configuration | Single Dual Collector |
| Package Width | 5.5 mm |
| Package Length | 6.5 mm |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Структура | pnp |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 200@500mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Base-Emitter Voltage (V) | 5 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Collector-Base Voltage (V) | 25 |
| Maximum Transition Frequency (MHz) | 320(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.3@60mA@3A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@60mA@3A |