2SB1205T-E, Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001016515
- Артикул
- 2SB1205T-E
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.75
- Tab
- Tab
- Type
- PNP
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 41 ₽)
Минимальный заказ: 750 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.75 |
| Tab | Tab |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 4 |
| PCB changed | 3 |
| Part Status | LTB |
| Configuration | Single Dual Collector |
| Package Width | 2.3 |
| Package Height | 5.5 |
| Package Length | 6.5 |
| Product Category | Bipolar Power |
| Supplier Package | TP |
| Структура | pnp |
| Standard Package Name | TO-251 |
| Minimum DC Current Gain | 200@500mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 25 |
| Maximum Transition Frequency (MHz) | 320(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1.3@60mA@3A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@60mA@3A |