2SB1189T100Q, Bipolar Transistors - BJT PNP 80V 0.7A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066373679
- Артикул
- 2SB1189T100Q
- Бренд
- Rohm
- RoHS
- Details
- Brand
- ROHM Semiconductor
- Width
- 2.5 mm
- Brand:
- ROHM Semiconductor
Цена по запросу
(от 59 ₽)
Минимальный заказ: 1000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы - BJT PNP 80V 0.7A
Технические параметры
| RoHS | Details |
| Brand | ROHM Semiconductor |
| Width | 2.5 mm |
| Brand: | ROHM Semiconductor |
| Height | 1.5 mm |
| Length | 4.5 mm |
| Series | 2SB1189 |
| Packaging | Reel |
| Вес, г | 0.14 |
| Technology: | Si |
| Unit Weight | 0.004603 oz |
| Manufacturer | ROHM Semiconductor |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | SOT-89-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Mounting Style: | SMD/SMT |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 1000 |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation | 2 W |
| DC Current Gain hFE Max | 120 at 0.1 A at 3 V |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 120 at 100 mA, 3 V |
| Gain Bandwidth Product fT | 120 MHz |
| Emitter- Base Voltage VEBO | -5 V |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO | -80 V |
| Continuous Collector Current | -0.7 A |
| Maximum DC Collector Current | -0.7 A |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | -700 mA |
| Maximum DC Collector Current: | 700 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 120 |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 120 |
| Collector- Emitter Voltage VCEO Max | -80 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 200 mV |