2SAR512RTL, Транзистор: PNP
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- Код товара
- 8070102645
- Артикул
- 2SAR512RTL
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- Вес, г
- 0.1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 54,58 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В, 1 Вт, 200 при 100 мА, 2 В, 2 А, биполярные транзисторы PNP SOT-346 - BJT ROHS
Технические параметры
| Brand: | ROHM Semiconductor |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | SOT-346T-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 2SAR512R |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 2A |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 1W |
| Pd - Power Dissipation: | 500 mW |
| DC Current Gain hFE Max: | 500 |
| Transition Frequency (fT) | 430MHz |
| Gain Bandwidth Product fT: | 430 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 200@100mA, 2V |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | -2 A |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 200 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@35mA, 700mA |