2SA2097(TE16L1,NQ), 100nA 50V 20W 200@500mA,2V 5A 270mV@1.6A,53mA PNP +150°C@(Tj) TO-252-3 BIpolar TransIstors - BJT
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- Код товара
- 8017656245
- Артикул
- 2SA2097(TE16L1,NQ)
- Бренд
- Toshiba
- Brand:
- Toshiba
- Вес, г
- 0.39
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 170 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 20 Вт 200 при 500 мА, 2 В 5 А биполярные транзисторы PNP TO-252 - BJT ROHS
Технические параметры
| Brand: | Toshiba |
| Вес, г | 0.39 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | TO-252-3, DPak |
| Manufacturer: | Toshiba |
| Package/Case: | 2-7J1A-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | - |
| Collector Current (Ic) | 5A |
| Factory Pack Quantity: | 2000 |
| Power Dissipation (Pd) | 20W |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 500 |
| Transition Frequency (fT) | - |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain (hFE@Ic,Vce) | 200@500mA, 2V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -5 A |
| Maximum DC Collector Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 200 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 270 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 270mV@1.6A, 53mA |