2SA2060(TE12L,F, 100nA 50V 2.5W 200@300mA,2V 2A PNP 200mV@1A,33mA +150°C@(Tj) SC-62 BIpolar TransIstors - BJT
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- Код товара
- 8017603551
- Артикул
- 2SA2060(TE12L,F
- Бренд
- Toshiba
- Brand:
- Toshiba
- Вес, г
- 0.13
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 150 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В, 1 Вт, 200 при 300 мА, 2 В, 2 А, биполярные транзисторы PNP TO-243AA - BJT ROHS
Технические параметры
| Brand: | Toshiba |
| Вес, г | 0.13 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Toshiba |
| Package/Case: | SC-62-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | - |
| Collector Current (Ic) | 2A |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 1W |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 500 |
| Transition Frequency (fT) | - |
| Emitter- Base Voltage VEBO: | 7 V |
| DC Current Gain (hFE@Ic,Vce) | 200@300mA, 2V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -2 A |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hFE Min: | 200 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@1A, 33mA |
| Максимально допустимый ток к ( Iк макс.А) | 2 |