2SA2040-TL-E, Транзистор: PNP, биполярный, 50В, 8А, 1Вт, TO252

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- Код товара
- 8064173324
- Артикул
- 2SA2040-TL-E
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- Type
- PNP
- Brand:
- onsemi
Цена по запросу
(от 93 ₽)
Минимальный заказ: 700 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 50В, 8А, 1Вт, TO252 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Type | PNP |
| Brand: | onsemi |
| EU RoHS | Compliant with Exemption |
| Series: | 2SA2040 |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.3 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | TO-252 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package Width | 5.5 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Height | 2.3 |
| Package Length | 6.5 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Standard Package Name | TO-252 |
| Minimum DC Current Gain | 200@500mA@2V |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 560 |
| Gain Bandwidth Product fT: | 290 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -8 A |
| Maximum DC Collector Current: | 8 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1000 |
| DC Collector/Base Gain hfe Min: | 200 |
| Maximum DC Collector Current (A) | 8 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 290(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 230 mV |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@40mA@2A |
| Factory Pack Quantity: Factory Pack Quantity: | 700 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.39@175mA@3.5A|0.4@40mA@2A |
| Максимальная рассеиваемая мощность ,Вт | 1 |
| Максимально допустимый ток к ( Iк макс.А) | 8 |