2SA2016-TD-E, Транзистор: PNP
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- Код товара
- 8017549896
- Артикул
- 2SA2016-TD-E
- Бренд
- ON Semiconductor***
- MSL
- MSL 1-Unlimited
- Brand:
- onsemi
- Вес, г
- 0.14
- No. of Pins
- 3Pins
Цена по запросу
(от 80,42 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 3,5 Вт 200 при 500 мА, 2 В 7 А биполярные транзисторы PNP SOT-89-3 - BJT ROHS
Технические параметры
| MSL | MSL 1-Unlimited |
| Brand: | onsemi |
| Вес, г | 0.14 |
| No. of Pins | 3Pins |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Transistor Type | PNP |
| Power Dissipation | 3.5W |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Transition Frequency | 290MHz |
| Operating Temperature | - |
| Transistor Case Style | SOT-89 |
| Collector Current (Ic) | 7A |
| Factory Pack Quantity: | 1000 |
| Power Dissipation (Pd) | 3.5W |
| DC Current Gain hFE Min | 200hFE |
| Pd - Power Dissipation: | 3.5 W |
| Operating Temperature Max | 150°C |
| Transition Frequency (fT) | 290MHz |
| Gain Bandwidth Product fT: | 330 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Continuous Collector Current | 7A |
| DC Current Gain (hFE@Ic,Vce) | 200@500mA, 2V |
| Collector Emitter Voltage Max | 50V |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 7 A |
| Maximum DC Collector Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| DC Collector/Base Gain hfe Min: | 200 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 240 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 240mV@2A, 40mA |