Моя заявка (0)

2SA1834TLR, Trans GP BJT PNP 20V 10A 1000mW 3-Pin(2+Tab) CPT T/R

2SA1834TLR, Trans GP BJT PNP 20V 10A 1000mW 3-Pin(2+Tab) CPT T/R

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8002186512
Артикул
2SA1834TLR
Бренд
Rohm
Tab
Tab
PPAP
No
SVHC
Yes
Type
PNP
Цена по запросу
(от 301 ₽)
Минимальный заказ: 84 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT PNP 20V 10A 1000 МВт 3-контактный (2+Tab) CPT T/R

Технические параметры

TabTab
PPAPNo
SVHCYes
TypePNP
Brand:ROHM Semiconductor
MountingSurface Mount
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.05
PCB changed2
Part StatusNRND
Technology:Si
Subcategory:Transistors
ConfigurationSingle
Manufacturer:ROHM Semiconductor
Package Width5.5 mm
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package Length6.5 mm
Mounting Style:SMD/SMT
Product CategoryBipolar Power
Supplier PackageCPT
Product Category:Bipolar Transistors-BJT
Структураpnp
Transistor Polarity:PNP
Standard Package NameTO-252
Factory Pack Quantity:2500
SVHC Exceeds ThresholdYes
Minimum DC Current Gain180@500mA@2V
Pd - Power Dissipation:1 W
DC Current Gain hFE Max:560
Gain Bandwidth Product fT:150 MHz
Emitter- Base Voltage VEBO:6 V
Number of Elements per Chip1
Collector- Base Voltage VCBO:30 V
Continuous Collector Current:-10 A
Maximum DC Collector Current:10 A
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)1000
DC Collector/Base Gain hFE Min:82
Maximum Base-Emitter Voltage (V)6
Maximum DC Collector Current (A)10
Maximum Collector-Base Voltage (V)30
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:20 V
Collector-Emitter Saturation Voltage:160 mV
Maximum Collector-Emitter Voltage (V)20
Maximum Base-Emitter Saturation Voltage (V)1.2@0.05A@4A
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.05A@4A

Техническая документация