2SA1834TLR, Trans GP BJT PNP 20V 10A 1000mW 3-Pin(2+Tab) CPT T/R

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002186512
- Артикул
- 2SA1834TLR
- Бренд
- Rohm
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Type
- PNP
Цена по запросу
(от 301 ₽)
Минимальный заказ: 84 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 20V 10A 1000 МВт 3-контактный (2+Tab) CPT T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| Brand: | ROHM Semiconductor |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| PCB changed | 2 |
| Part Status | NRND |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | ROHM Semiconductor |
| Package Width | 5.5 mm |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package Length | 6.5 mm |
| Mounting Style: | SMD/SMT |
| Product Category | Bipolar Power |
| Supplier Package | CPT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Standard Package Name | TO-252 |
| Factory Pack Quantity: | 2500 |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 180@500mA@2V |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 560 |
| Gain Bandwidth Product fT: | 150 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | -10 A |
| Maximum DC Collector Current: | 10 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1000 |
| DC Collector/Base Gain hFE Min: | 82 |
| Maximum Base-Emitter Voltage (V) | 6 |
| Maximum DC Collector Current (A) | 10 |
| Maximum Collector-Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 150(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Saturation Voltage: | 160 mV |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.2@0.05A@4A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@0.05A@4A |