2SA1832-Y,LF, Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004726719
- Артикул
- 2SA1832-Y,LF
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series:
- 2SA1832
- Вес, г
- 0.01
- Technology:
- Si
Цена по запросу
(от 77 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Series: | 2SA1832 |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Toshiba |
| Package/Case: | SOT-426-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Pd - Power Dissipation: | 100 mW |
| DC Current Gain hFE Max: | 400 at-2 mA, -6 V |
| Gain Bandwidth Product fT: | 80 MHz |
| Emitter- Base Voltage VEBO: | -5 V |
| Collector- Base Voltage VCBO: | -50 V |
| Maximum DC Collector Current: | -150 mA |
| Maximum Operating Temperature: | +125 C |
| DC Collector/Base Gain hFE Min: | 70 at-2 mA, -6 V |
| Collector- Emitter Voltage VCEO Max: | -50 V |
| Collector-Emitter Saturation Voltage: | -100 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |