2SA1586-Y,LF, 100nA 50V 200mW 120@2mA,6V 150mA 80MHz PNP 100mV@100mA,10mA +150°C@(Tj) SOT-323(SC-70-3) BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062155370
- Артикул
- 2SA1586-Y,LF
- Бренд
- Toshiba
- ECCN
- EAR99
- RoHS
- Details
- Brand
- Toshiba
- HTSUS
- 8541.21.0095
Цена по запросу
(от 8 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор PNP 50 В 150 мА 80 МГц 100 МВт для поверxностного монтажа USM
Технические параметры
| ECCN | EAR99 |
| RoHS | Details |
| Brand | Toshiba |
| HTSUS | 8541.21.0095 |
| Brand: | Toshiba |
| Series | 2SA1586 |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Packaging | Cut Tape |
| Вес, г | 0.03 |
| Power - Max | 100mW |
| RoHS Status | RoHS Compliant |
| Technology: | Si |
| Unit Weight | 0.000219 oz |
| Manufacturer | Toshiba |
| Subcategory: | Transistors |
| Корпус | sot-323 |
| Configuration | Single |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | SC-70-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70, SOT-323 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Base Product Number | TC74LCX86 -> |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 3000 |
| Operating Temperature | 125В°C (TJ) |
| Factory Pack Quantity: | 3000 |
| Frequency - Transition | 80MHz |
| Pd - Power Dissipation | 100 mW |
| DC Current Gain hFE Max | 400 |
| Pd - Power Dissipation: | 100 mW |
| Supplier Device Package | USM |
| DC Current Gain hFE Max: | 400 |
| Gain Bandwidth Product fT | 80 MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Gain Bandwidth Product fT: | 80 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO | 50 V |
| Maximum DC Collector Current | 150 mA |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 150 mA |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -55 C |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector (Ic) (Max) | 150mA |
| DC Collector/Base Gain hfe Min | 70 |
| Maximum Operating Temperature: | +125 C |
| DC Collector/Base Gain hFE Min: | 70 |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage | 0.1 V |
| Collector-Emitter Saturation Voltage: | 100 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Граничная частота коэффициента передачи тока fгр.МГц | 80 |