Моя заявка (0)

2SA1579T106R, 120V 560@50mA,100V 50mA PNP SOT-323-3 BIpolar (BJT) ROHS

2SA1579T106R, 120V 560@50mA,100V 50mA PNP SOT-323-3 BIpolar (BJT) ROHS

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8062097208
Артикул
2SA1579T106R
Бренд
Rohm
RoHS
Details
Brand
ROHM Semiconductor
Width
1.25 mm
Brand:
ROHM Semiconductor
Цена по запросу
(от 34,96 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

МАЛОСИГНАЛЬНЫЙ БИПОЛЯРНЫЙ ТРАНЗИСТОР, 0,05А I(C), 120 В CEO, 1-ЭЛЕМЕНТНЫЙ, PNP, КРЕМНИЕВЫЙ

Технические параметры

RoHSDetails
BrandROHM Semiconductor
Width1.25 mm
Brand:ROHM Semiconductor
Height0.8 mm
Length2 mm
Series2SA1579
PackagingReel
Вес, г0.03
Technology:Si
ManufacturerROHM Semiconductor
Subcategory:Transistors
КорпусSOT-323-3
ConfigurationSingle
Manufacturer:ROHM Semiconductor
Package/Case:SOT-323-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Mounting Style:SMD/SMT
Product CategoryBipolar Transistors-BJT
Product Category:Bipolar Transistors-BJT
Структураpnp
Transistor PolarityPNP
Transistor Polarity:PNP
Factory Pack Quantity3000
Factory Pack Quantity:3000
Pd - Power Dissipation0.2 W
DC Current Gain hFE Max560
Pd - Power Dissipation:200 mW
DC Current Gain hFE Max:560
Gain Bandwidth Product fT140 MHz
Emitter- Base Voltage VEBO-5 V
Gain Bandwidth Product fT:140 MHz
Emitter- Base Voltage VEBO:5 V
Collector- Base Voltage VCBO-120 V
Continuous Collector Current-50 mA
Maximum DC Collector Current0.05 A
Collector- Base Voltage VCBO:120 V
Continuous Collector Current:-50 mA
Maximum DC Collector Current:50 mA
Maximum Operating Temperature+150 C
DC Collector/Base Gain hfe Min180
Maximum Operating Temperature:+150 C
DC Collector/Base Gain hFE Min:180
Collector- Emitter Voltage VCEO Max-120 V
Collector- Emitter Voltage VCEO Max:120 V
Collector-Emitter Saturation Voltage-0.5 V
Collector-Emitter Saturation Voltage:500 mV

Техническая документация