2SA1416S-TD-E, Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001342653
- Артикул
- 2SA1416S-TD-E
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Type
- PNP
Цена по запросу
(от 44 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
100 В 500 МВт, 100 при 100 мА, 5 В 1 А, биполярные транзисторы PNP SOT-89-3 - BJT ROHS
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.13 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 500 mW |
| Корпус | SOT-89/TO-243 |
| Configuration | Single Dual Collector |
| Mounting Type | Surface Mount |
| Package Width | 2.5 |
| Package / Case | TO-243AA |
| Package Length | 4.5 |
| Transistor Type | PNP |
| EDA / CAD Models | 2SA1416S-TD-E by Ultra Librarian |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Структура | pnp |
| Operating Temperature | 150°C(TJ) |
| Standard Package Name | SOT |
| Collector Current (Ic) | 1A |
| Frequency - Transition | 120MHz |
| Power Dissipation (Pd) | 500mW |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 140@100mA@5V |
| Supplier Device Package | PCP |
| Transition Frequency (fT) | 120MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 40mA, 400mA |
| Current - Collector (Ic) (Max) | 1 A |
| Maximum Power Dissipation (mW) | 1300 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 120 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | 150 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@40mA@400mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.6@40mA@400mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@40mA, 400mA |
| Максимально допустимый ток к ( Iк макс.А) | 1 |