2SA1162-GR,LF, 100nA 50V 150mW 70@2mA,6V 150mA 80MHz 100mV@100mA,10mA PNP +125°C@(Tj) SOT-23-3L BIpolar TransIstors - BJT
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- Код товара
- 8017602387
- Артикул
- 2SA1162-GR,LF
- Бренд
- Toshiba
- RoHS
- Details
- Brand
- Toshiba
- Series
- 2SA1162
- Packaging
- Reel
Цена по запросу
(от 22 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
100nA 50 В 150 МВт 70 при 2 мА, 6 В 150 мА 80 МГц 100 мВ при 100 мА,10 мА PNP +125°C@ (Tj) Биполярные транзисторы SOT-23-3L - BJT
Технические параметры
| RoHS | Details |
| Brand | Toshiba |
| Series | 2SA1162 |
| Packaging | Reel |
| Pin Count | 3 |
| Вес, г | 0.02 |
| Unit Weight | 0.000282 oz |
| Manufacturer | Toshiba |
| Package Type | TO-236MOD(SC-59) |
| Корпус | SOT-23-3(TO-236) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-59-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 3000 |
| Collector Current (Ic) | 150mA |
| Pd - Power Dissipation | 150mW |
| Power Dissipation (Pd) | 150mW |
| DC Current Gain hFE Max | 400 |
| Minimum DC Current Gain | 70 |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 80 MHz |
| Maximum Power Dissipation | 150 mW |
| Transition Frequency (fT) | 80MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Frequency | 80 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 50 V |
| DC Current Gain (hFE@Ic,Vce) | 70@2mA, 6V |
| Maximum DC Collector Current | 150mA |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 70 |
| Maximum Collector Base Voltage | -50 V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum Collector Emitter Voltage | -50 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Breakdown Voltage | 50V |
| Collector-Emitter Saturation Voltage | 0.1 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 0.1V@100mA, 10mA |
| Граничная частота коэффициента передачи тока fгр.МГц | 80 |