Моя заявка (0)

2PC4081R,115, 50V 180@1mA,6V 200mW 150mA NPN SOT-323-3 Bipolar (BJT) ROHS

2PC4081R,115, 50V 180@1mA,6V 200mW 150mA NPN SOT-323-3 Bipolar (BJT) ROHS

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8048738124
Артикул
2PC4081R,115
Бренд
Nexperia B.V.
ECCN
EAR99
HTSUS
8541.21.0075
Brand:
Nexperia
Family
Transistors-Bipolar(BJT)-Single
Цена по запросу
(от 7,30 ₽)
Минимальный заказ: 10 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 50 В 150 мА 100 МГц 200 МВт для поверxностного монтажа SOT-323

Технические параметры

ECCNEAR99
HTSUS8541.21.0075
Brand:Nexperia
FamilyTransistors-Bipolar(BJT)-Single
SeriesAutomotive, AEC-Q101 ->
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
PackagingDigi-Reel®
Вес, г0.03
Part StatusActive
Power - Max200mW
RoHS StatusROHS3 Compliant
Technology:Si
ManufacturerNXP Semiconductors
REACH StatusREACH Unaffected
Subcategory:Transistors
КорпусSOT-323-3
Manufacturer:Nexperia
Mounting TypeSurface Mount
Package/Case:SOT-323-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseSC-70, SOT-323
Mounting Style:SMD/SMT
Part # Aliases:934031760115
Transistor TypeNPN
Standard Package1
Product Category:Bipolar Transistors-BJT
Структураnpn
Base Product Number2PC4081 ->
Transistor Polarity:NPN
Operating Temperature150В°C (TJ)
Factory Pack Quantity:3000
Frequency - Transition100MHz
Pd - Power Dissipation:200 mW
Supplier Device PackageSOT-323
DC Current Gain hFE Max:180 at 1 mA, 6 V
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:7 V
Collector- Base Voltage VCBO:60 V
Maximum DC Collector Current:150 mA
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector (Ic) (Max)150mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hFE Min:180 at 1 mA, 6 V
Current - Collector Cutoff (Max)100nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:50 V
Collector-Emitter Saturation Voltage:400 mV
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max)50V

Техническая документация