2N7002W-G, MOSFETs MOSFET N-CH 60V 0.25A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063971024
- Артикул
- 2N7002W-G
- Бренд
- Comchip Technology
- Brand:
- Comchip Technology
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET(Metal Oxide)
Цена по запросу
(от 35,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 60 В 115 мА (Ta) 200 МВт (Ta) для поверxностного монтажа SOT-323
Технические параметры
| Brand: | Comchip Technology |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Comchip Technology |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Package / Case | SC-70, SOT-323 |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFET |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Pd - Power Dissipation: | 200 mW |
| Power Dissipation (Max) | 200mW(Ta) |
| Supplier Device Package | SOT-323 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 115 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 115mA(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |