2N7002T-7-F, Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001012040
- Артикул
- 2N7002T-7-F
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 0.85mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 9,10 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 0,115А, 0,15Вт, SOT523 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 0.85mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-523(SC-89) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Small Signal |
| Supplier Package | SOT-523 |
| Maximum IDSS (uA) | 1 |
| Структура | N-Channel |
| Transistor Material | Si |
| Standard Package Name | SOT |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 mW |
| Supplier Temperature Grade | Commercial |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation (mW) | 150 |
| Maximum Drain Source Resistance | 13.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 11 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 115 mA |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.115 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
| Maximum Drain Source Resistance (mOhm) | 7500@5V |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.8 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.15 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2@25V |
| Крутизна характеристики, S | 80 mS |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.115 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.115 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |