2N7002PV,115, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8032989817
- Артикул
- 2N7002PV,115
- Бренд
- Nexperia B.V.
- MSL
- MSL 1-Unlimited
- PPAP
- No
- Grade
- Automotive
- EU RoHS
- Compliant
Цена по запросу
(от 17,71 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 0,35A 6-контактный SOT-666 T/R
Технические параметры
| MSL | MSL 1-Unlimited |
| PPAP | No |
| Grade | Automotive |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.003 |
| FET Feature | Logic Level Gate |
| No. of Pins | 6Pins |
| PCB changed | 6 |
| Part Status | Active |
| Power - Max | 330mW |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | SOT-563, SOT-666 |
| Product Category | Small Signal |
| Supplier Package | SOT-666 |
| Process Technology | TMOS |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Структура | MOSFET |
| Transistor Mounting | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Transistor Case Style | SOT-666 |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 4 |
| Особенности | - |
| Supplier Device Package | SOT-666 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 350mA |
| Number of Elements per Chip | 2 |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 0.6@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 10 |
| Gate Source Threshold Voltage Max | 1.75V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Maximum Continuous Drain Current (A) | 0.35 |
| Typical Input Capacitance @ Vds (pF) | 30@10V |
| Maximum Drain Source Resistance (mOhm) | 1600@10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.33 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |