2N7002KW_R1_00001, MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004772344
- Артикул
- 2N7002KW_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- NFET-035TA
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
Цена по запросу
(от 8,82 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 60 В 115 мА (Ta) 200 МВт (Ta) для поверxностного монтажа SOT-323
Технические параметры
| Brand: | Panjit |
| Series: | NFET-035TA |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Package / Case | SC-70, SOT-323 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 800 pC |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Особенности | интеллектуальный ключ с защитой |
| Pd - Power Dissipation: | 200 mW |
| Power Dissipation (Max) | 200mW(Ta) |
| Supplier Device Package | SOT-323 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 20 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 4.5 V |
| Typical Turn-Off Delay Time: | 40 ns |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 115 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mS |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 35 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 115mA(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |