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2N7002KQ-7, Транзистор N-MOSFET, полевой, 60В, 0,31А, 0,37Вт, SOT23

2N7002KQ-7, Транзистор N-MOSFET, полевой, 60В, 0,31А, 0,37Вт, SOT23

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Код товара
8074425441
Артикул
2N7002KQ-7
Бренд
DIODES INC.
Case
SOT23
Brand:
Diodes Incorporated
Mounting
SMD
Fall Time:
9.9 ns
Цена по запросу
(от 31,59 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

CaseSOT23
Brand:Diodes Incorporated
MountingSMD
Fall Time:9.9 ns
Rise Time:3.4 ns
Вес, г0.02
Applicationautomotive industry
Technology:Si
ManufacturerDIODES INCORPORATED
Polarisationunipolar
Subcategory:MOSFETs
Channel Mode:Enhancement
Drain current0.31A
Manufacturer:Diodes Incorporated
Product Type:MOSFET
Kind of channelenhanced
Kind of packagereel, tape
Mounting Style:SMD/SMT
Package / Case:SOT23-3
Power dissipation0.37W
Product Category:MOSFET
Qg - Gate Charge:300 pC
Type of transistorN-MOSFET
Gate-source voltage±20V
Number of Channels:1 Channel
On-state resistance3Ω
Drain-source voltage60V
Transistor Polarity:N-Channel
Pd - Power Dissipation:540 mW
Vgs - Gate-Source Voltage:-20 V, +20 V
Typical Turn-On Delay Time:3.9 ns
Typical Turn-Off Delay Time:15.7 ns
Id - Continuous Drain Current:380 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Features of semiconductor devicesESD protected gate
Rds On - Drain-Source Resistance:2 Ohms
Vds - Drain-Source Breakdown Voltage:60 V
Vgs th - Gate-Source Threshold Voltage:1.6 V
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация