2N7002KDW-AU_R1_000A1, 60V 250mA 350mW 2.5V SOT-363 FET, MOSFET Arrays RoHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061836067
- Артикул
- 2N7002KDW-AU_R1_000A1
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Fall Time:
- 23 ns
- Rise Time:
- 19 ns
- Вес, г
- 0.03
Цена по запросу
(от 21,29 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Fall Time: | 23 ns |
| Rise Time: | 19 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Panjit |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 800 pC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 350 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 2.7 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 250 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 4 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |